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STW11NK100Z N-Channel 1000V 8.3A (Tc) 230W (Tc) Through Hole TO-247-3
Price & Procurement
 

Quantity
All prices are in KRW.
Price Break Unit Price Extended Price
1 7,812.00000 ₩7,812
10 7,010.00000 ₩70,100
25 6,627.36000 ₩165,684
100 5,743.78000 ₩574,378
500 4,889.62600 ₩2,444,813
2,500 3,917.58840 ₩9,793,971

Submit a request for quotation on quantities greater than those displayed.

Product Overview
Digi-Key Part Number 497-3255-5-ND
Copy   497-3255-5-ND
Quantity Available 6,651
Can ship immediately
Manufacturer

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Manufacturer Part Number

STW11NK100Z

Copy   STW11NK100Z
Description MOSFET N-CH 1KV 8.3A TO-247
Copy   MOSFET N-CH 1KV 8.3A TO-247
Manufacturer Standard Lead Time 8 Weeks
Detailed Description

N-Channel 1000V 8.3A (Tc) 230W (Tc) Through Hole TO-247-3

Copy   N-Channel 1000V 8.3A (Tc) 230W (Tc) Through Hole TO-247-3
Documents & Media
Datasheets STW11NK100Z
Other Related Documents STW11NK100Z View All Specifications
Product Training Modules STMicroelectronics ST MOSFETs
Simulation Models STW11NK100Z Spice Model
EDA / CAD Models ? Download from Ultra Librarian
Product Attributes Select All
Categories
Manufacturer STMicroelectronics
Series SuperMESH™
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000V
Current - Continuous Drain (Id) @ 25°C 8.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.38Ohm @ 4.15A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 162nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 3500pF @ 25V
FET Feature -
Power Dissipation (Max) 230W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
Base Part Number STW11N
 
Environmental & Export Classifications
Lead Free Status / RoHS Status Lead free / ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package ? 30
Other Names 497-3255-5

14:58:43 8-22-2019