2N7000TA N-Channel 60V 200mA (Tc) 400mW (Ta) Through Hole TO-92-3
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131,175 In Stock
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All prices are in KRW.
Price Break Unit Price Extended Price
1 586.00000 ₩586
10 437.10000 ₩4,371
100 247.62000 ₩24,762
500 164.01600 ₩82,008
1,000 125.74500 ₩125,745

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Alternate Package
  • Tape & Box (TB)  : 2N7000TATB-ND
  • Minimum Quantity: 2,000
  • Quantity Available: 130,000 - Immediate
  • Unit Price: ₩109.34350

2N7000TA

Datasheet
Digi-Key Part Number 2N7000TACT-ND
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Manufacturer

onsemi

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Manufacturer Part Number 2N7000TA
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Description MOSFET N-CH 60V 200MA TO92-3
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Detailed Description

N-Channel 60V 200mA (Tc) 400mW (Ta) Through Hole TO-92-3

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Customer Reference
Documents & Media
Datasheets 2N7000 Datasheet
Environmental Information Material Declaration 2N7000TA
Design Resources Available In the Digi-Key KiCad Library
PCN Design/Specification 2N7000 06/Sep/2016
Logo 17/Aug/2017
PCN Assembly/Origin Mult Dev Site Transfer
PCN Packaging Mult Devices 24/Oct/2017
EDA / CAD Models 2N7000TA by Ultra Librarian
Product Attributes
Type Description Select All
Categories
Manufacturer onsemi
Series -
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 200mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 3V @ 1mA
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V
FET Feature -
Power Dissipation (Max) 400mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-92-3
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Base Part Number 2N7000
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names 2N7000TACT