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FQP27P06 P-Channel 60V 27A (Tc) 120W (Tc) Through Hole TO-220-3
Price & Procurement
12,012 In Stock
Can ship immediately
 

Quantity
All prices are in KRW.
Price Break Unit Price Extended Price
1 1,853.00000 ₩1,853
10 1,513.60000 ₩15,136
25 1,485.84000 ₩37,146
100 1,177.39000 ₩117,739
500 997.93400 ₩498,967
1,000 812.92100 ₩812,921
2,500 765.26360 ₩1,913,159
5,000 739.01860 ₩3,695,093

Submit a request for quotation on quantities greater than those displayed.

FQP27P06

Datasheet
Digi-Key Part Number FQP27P06-ND
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Manufacturer

ON Semiconductor

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Manufacturer Part Number FQP27P06
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Description MOSFET P-CH 60V 27A TO220-3
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Manufacturer Standard Lead Time 19 Weeks
Detailed Description

P-Channel 60V 27A (Tc) 120W (Tc) Through Hole TO-220-3

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Customer Reference
Documents & Media
Datasheets FQP27P06
TO220B03 Pkg Drawing
Environmental Information Material Declaration FQP27P06
Design Resources Available In the Digi-Key KiCad Library
PCN Design/Specification Logo 17/Aug/2017
PCN Assembly/Origin Mult Dev Asembly Chg 7/May/2020
PCN Packaging Tape and Box/Reel Barcode Update 07/Aug/2014
Mult Devices 24/Oct/2017
HTML Datasheet TO220B03 Pkg Drawing
EDA / CAD Models FQP27P06 by Ultra Librarian
Product Attributes
Type Description Select All
Categories
Manufacturer ON Semiconductor
Series QFET®
Packaging Tube 
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 70mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 25V
FET Feature -
Power Dissipation (Max) 120W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
Base Part Number FQP2
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1,000