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BSC014NE2LSIATMA1 N-Channel 25V 33A (Ta), 100A (Tc) 2.5W (Ta), 74W (Tc) Surface Mount PG-TDSON-8-7
Price & Procurement
12,585 In Stock
Can ship immediately
 

Quantity
All prices are in KRW.
Price Break Unit Price Extended Price
1 1,714.00000 ₩1,714
10 1,529.40000 ₩15,294
25 1,451.80000 ₩36,295
100 1,088.73000 ₩108,873
250 1,078.42400 ₩269,606
500 922.88400 ₩461,442
1,000 751.77900 ₩751,779
2,500 741.40960 ₩1,853,524

Submit a request for quotation on quantities greater than those displayed.

Alternate Package
  • Tape & Reel (TR)  : BSC014NE2LSIATMA1TR-ND
  • Minimum Quantity: 5,000
  • Quantity Available: 10,000 - Immediate
  • Unit Price: ₩674.00880

BSC014NE2LSIATMA1

Datasheet
Digi-Key Part Number BSC014NE2LSIATMA1CT-ND
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Manufacturer

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Manufacturer Part Number BSC014NE2LSIATMA1
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Description MOSFET N-CH 25V 33A TDSON-8
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Manufacturer Standard Lead Time 18 Weeks
Detailed Description

N-Channel 25V 33A (Ta), 100A (Tc) 2.5W (Ta), 74W (Tc) Surface Mount PG-TDSON-8-7

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Product Attributes
Type Description Select All
Categories
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging Cut Tape (CT) 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 33A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2700pF @ 12V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 74W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8-7
Package / Case 8-PowerTDFN
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
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Additional Resources
Standard Package 1
Other Names BSC014NE2LSIATMA1CT
BSC014NE2LSICT
BSC014NE2LSICT-ND