Texas Instruments의 TPS22916 규격서

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TPS22916xx 1-V–5.5-V, 2-A, 60-mΩ Ultra-Low Leakage Load Switch
1 Features
• Input operating voltage range (VIN): 1 V–5.5 V
• Maximum continuous current (IMAX): 2 A
• ON-resistance (RON):
– 5 VIN = 60 mΩ (typ.), 100 mΩ (85°C max.)
– 1.8 VIN = 100 mΩ (typ.), 150 mΩ (85°C max.)
– 1 VIN = 200 mΩ (typ.), 325 mΩ (85°C max.)
• Ultra-low power consumption:
– ON state (IQ): 0.5 µA (typ.), 1 µA (max.)
– OFF state (ISD): 10 nA (typ.), 100 nA (max.)
– TPS22916BL/CL/CNL (ISD): 100 nA (typ.), 300
nA (max.)
• Smart ON pin pulldown (RPD):
– ON ≥ VIH (ION): 10 nA (max.)
– ON ≤ VIL (RPD): 750 kΩ (typ.)
• Slow Timing in C Version Limits Inrush Current:
– 5-V turn-on time (tON): 1400 µs at 5 mV/µs
– 1.8-V turn-on time (tON): 3000 µs at 1 mV/µs
– 1-V turn-on time (tON): 6500 µs at 0.3 mV/µs
• Fast timing in b version reduces wait time:
– 5-V turn-on time (tON): 115 µs at 57 mV/µs
– 1.8-V turn-on time (tON): 250 µs at 12 mV/µs
– 1-V turn-on time (tON): 510 µs at 3.3 mV/µs
• Always-ON true Reverse Current Blocking (RCB):
– Activation current (IRCB): –500 mA (typ.)
– Reverse leakage (IIN,RCB): –300 nA (max.)
• Quick Output Discharge (QOD): 150 Ω (typ.)
(N version has no QOD)
• Active low enable option (L versions)
2 Applications
• Wearables
• Smartphones
• Tablets
• Portable speakers
3 Description
The TPS22916xx is a small, single channel load
switch using a low leakage P-Channel MOSFET for
minimum power loss. Advanced gate control design
supports operating voltages as low as 1 V with
minimal increase in ON-resistance and power loss.
Multiple timing options are available to support
various system loading conditions. For heavy
capacitive loads, the slow turn-on timing in the C
version minimizes the inrush current. In cases with
light capacitive loads, the fast timing in the B version
reduces required wait time.
The switch ON state is controlled by a digital input
that is capable of interfacing directly with low-voltage
control signals. Both Active High and Active Low (L)
versions are available. When power is first applied,
a smart pulldown is used to keep the ON pin from
floating until system sequencing is complete. AFter
the ON pin is deliberately driven high (≥VIH), the smart
pulldown is disconnected to prevent unnecessary
power loss.
The TPS22916xx is available in a small, space
saving 0.78 mm × 0.78 mm, 0.4-mm pitch, 0.5-
mm height 4-pin Wafer-Chip-Scale (WCSP) package
(YFP). The device is characterized for operation over
a temperature range of –40°C to +85°C.
Device Information(1)
PART NUMBER PACKAGE BODY SIZE (NOM)
TPS22916xx WCSP (4) 0.78 mm × 0.78 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Device Comparison Table
VERSION TIMING QOD ENABLE (ON)
TPS22916B Fast Yes Active High
TPS22916BL Fast Yes Active Low
TPS22916C Slow Yes Active High
TPS22916CN Slow No Active High
TPS22916CL Slow Yes Active Low
TPS22916CNL Slow No Active Low
L
H
TPS22916xx
VIN VOUT
RL
CL
ON GND
VIN
+
±
CIN
Copyright © 2017, Texas Instruments Incorporated
Simplified Schematic
TPS22916
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An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
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Table of Contents
1 Features............................................................................1
2 Applications..................................................................... 1
3 Description.......................................................................1
4 Revision History.............................................................. 2
5 Pin Configuration and Functions...................................3
6 Specifications.................................................................. 4
6.1 Absolute Maximum Ratings........................................ 4
6.2 ESD Ratings............................................................... 4
6.3 Recommended Operating Conditions.........................4
6.4 Thermal Information....................................................4
6.5 Electrical Characteristics.............................................5
6.6 Switching Characteristics............................................6
6.7 Typical Characteristics................................................ 8
7 Parameter Measurement Information.......................... 15
8 Detailed Description......................................................16
8.1 Overview................................................................... 16
8.2 Functional Block Diagram......................................... 16
8.3 Feature Description...................................................16
8.4 Device Functional Modes..........................................17
9 Application and Implementation.................................. 18
9.1 Application Information............................................. 18
9.2 Typical Application.................................................... 18
10 Power Supply Recommendations..............................19
11 Layout........................................................................... 20
11.1 Layout Guidelines................................................... 20
11.2 Layout Example...................................................... 20
11.3 Thermal Considerations.......................................... 20
12 Device and Documentation Support..........................21
12.1 Documentation Support.......................................... 21
12.2 Receiving Notification of Documentation Updates..21
12.3 Support Resources................................................. 21
12.4 Trademarks.............................................................21
12.5 Electrostatic Discharge Caution..............................21
12.6 Glossary..................................................................21
13 Mechanical, Packaging, and Orderable
Information.................................................................... 21
13.1 Tape and Reel Information......................................22
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision E (September 2020) to Revision F (December 2021) Page
• Added TPS22916CNL and TPS22916BL orderables to the data sheet............................................................. 1
Changes from Revision D (October 2019) to Revision E (September 2020) Page
• Updated the numbering format for tables, figures and cross-references throughout the document...................1
Changes from Revision C (October 2018) to Revision D (October 2019) Page
• Changed package dimensions from 0.74 mm x 0.74 mm to 0.78 mm x 0.78 mm..............................................1
Changes from Revision B (December 2017) to Revision C (October 2018) Page
• Changed Package Drawing Dimensions ......................................................................................................... 21
Changes from Revision A (September 2017) to Revision B (December 2017) Page
• Changed Pinout drawing labeled Laser Marking................................................................................................ 1
Changes from Revision * (July 2017) to Revision A (September 2017) Page
• Changed device document from Advanced Info to Production Data ................................................................. 1
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5 Pin Configuration and Functions
B
A
1
2
VIN
ON GND
VOUT
Figure 5-1. YFP Package 4-Pin WSON Laser
Marking View
B
A
2
1
VOUT
GND ON
VIN
Figure 5-2. YFP Package 4-Pin WSON Bump View
Table 5-1. Pin Functions
PIN TYPE DESCRIPTION
NO. NAME
A1 VOUT Power Switch output
A2 VIN Power Switch input
B1 GND Ground Device ground
B2 ON Digital input Device enable
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6 Specifications
6.1 Absolute Maximum Ratings
Over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VIN Input voltage –0.3 6 V
VOUT Output voltage –0.3 6 V
VON Enable voltage –0.3 6 V
IMAX Maximum continuous switch current 2 A
IPLS Maximum pulsed switch current, pulse < 300-µs, 2% duty cycle 2.5 A
TJ,MAX Maximum junction temperature 125 °C
TSTG Storage temperature –65 150 °C
TLEAD Maximum Lead temperature (10-s soldering time) 300 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress
ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under
Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability.
6.2 ESD Ratings
VALUE UNIT
V(ESD) Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000
V
Charged-device model (CDM), per JEDEC specification JESD22-
C101(2) ±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Manufacturing with
less than 500-V HBM is possible with the necessary precautions. Pins listed as ±2000 V may actually have higher performance.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Manufacturing with
less than 250-V CDM is possible with the necessary precautions. Pins listed as ±500 V may actually have higher performance.
6.3 Recommended Operating Conditions
Over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VIN Input voltage 1 5.5 V
VOUT Output voltage 0 5.5 V
VIH High-level input voltage, ON 1 5.5 V
VIL Low-level input voltage, ON 0 0.35 V
TAOperating free-air temperature –40 85 °C
6.4 Thermal Information
Thermal Parameters(1)
TPS22916xx
UNITYFP (WCSP)
4 PINS
θJA Junction-to-ambient thermal resistance 193 °C/W
θJCtop Junction-to-case (top) thermal resistance 2.3 °C/W
θJB Junction-to-board thermal resistance 36 °C/W
ψJT Junction-to-top characterization parameter 12 °C/W
ψJB Junction-to-board characterization parameter 36 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
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6.5 Electrical Characteristics
Unless otherwise noted, the specification in the following table applies for all variants over the entire recommended power
supply voltage range of 1 V to 5.5 V unless noted otherwise. Typical Values are at 25°C.
PARAMETER TEST CONDITIONS TJMIN TYP MAX UNIT
INPUT SUPPLY (VIN)
IQ,VIN VIN Quiescent current Enabled, VOUT = Open –40°C to +85°C 0.5 1.0 µA
ISD,VIN VIN Shutdown current Disabled, VOUT = GND
(TPS22916B/C/CN)
–40°C to +85°C 10 100 nA
Disabled, VOUT = GND (TPS22916BL/CL/
CNL)
–40°C to +85°C 100 300 nA
ON-RESISTANCE
(RON)
RON ON-Resistance IOUT = 200 mA
VIN = 5 V
25°C 60 80
mΩ
–40°C to +85°C 100
–40°C to +105°C 120
VIN = 3.6 V
25°C 70 90
–40°C to +85°C 120
–40°C to +105°C 140
VIN = 1.8 V
25°C 100 125
–40°C to +85°C 150
–40°C to +105°C 175
VIN = 1.2 V
25°C 150 200
–40°C to +85°C 250
–40°C to +105°C 300
VIN = 1 V
25°C 200 275
–40°C to +85°C 325
–40°C to +105°C 375
ENABLE PIN (ON)
ION ON Pin leakage Enabled –40°C to +85°C –10 10 nA
RPD Smart Pull Down Resistance Disabled –40°C to +85°C 750 kΩ
REVERSE CURRENT BLOCKING
(RCB)
IRCB RCB Activation Current Enabled, VOUT > VIN –40°C to +85°C -500 mA
tRCB RCB Activation time Enabled, VOUT > VIN + 200mV –40°C to +85°C 10 µs
VRCB RCB Release Voltage Enabled, VOUT > VIN –40°C to +85°C 25 mV
IIN,RCB VIN Reverse Leakage Current 0 V ≤ VIN + VRCB ≤ VOUT ≤ 5.5 V –40°C to +85°C –300 nA
QUICK OUTPUT DISCHARGE
(QOD)
QOD(1) Output discharge resistance Disabled (Not in TPS22916CN/CNL) –40°C to +85°C 150 Ω
(1) For more information on which devices include quick output discharge, see the Device Functional Modes section.
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6.6 Switching Characteristics
Unless otherwise noted, the typical characteristics in the following table applies over the entire recommended power supply
voltage range of 1 V to 5.5 V at 25°C with a load of CL = 0.1µF, RL = 10Ω.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
TPS22916B,
TPS22916BL
tON Turn On Time
VIN = 5 V 115
µs
VIN = 3.6 V 140
VIN = 1.8 V 250
VIN = 1.2 V 350
VIN = 1 V 510
tRISE Rise Time
VIN = 5 V 70
µs
VIN = 3.6 V 80
VIN = 1.8 V 130
VIN = 1.2 V 190
VIN = 1 V 240
SRON Slew Rate
VIN = 5 V 57
mV/µs
VIN = 3.6 V 36
VIN = 1.8 V 12
VIN = 1.2 V 5.1
VIN = 1 V 3.3
tOFF Turn Off Time
VIN = 5 V 5
µs
VIN = 3.6 V 5
VIN = 1.8 V 10
VIN = 1.2 V 15
VIN = 1 V 25
tFALL Fall Time CL = 0.1 µF, RL = 10 Ω(1) 2.3 µs
CL = 1µF, RL = Open(1) 315
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6.6 Switching Characteristics (continued)
Unless otherwise noted, the typical characteristics in the following table applies over the entire recommended power supply
voltage range of 1 V to 5.5 V at 25°C with a load of CL = 0.1µF, RL = 10Ω.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
TPS22916C, TPS22916CN, TPS22916CL,
TPS22916CNL
tON Turn On Time
VIN = 5 V 1400
µs
VIN = 3.6 V 1700
VIN = 1.8 V 3000
VIN = 1.2 V 5000
VIN = 1 V 6500
tRISE Rise Time
VIN = 5 V 800
µs
VIN = 3.6 V 900
VIN = 1.8 V 1400
VIN = 1.2 V 2300
VIN = 1 V 3000
SRON Slew Rate
VIN = 5 V 5
mV/µs
VIN = 3.6 V 3.2
VIN = 1.8 V 1
VIN = 1.2 V 0.4
VIN = 1 V 0.3
tOFF Turn Off Time
VIN = 5 V 5
µs
VIN = 3.6 V 5
VIN = 1.8 V 10
VIN = 1.2 V 15
VIN = 1 V 25
tFALL Fall Time(2) CL = 0.1 µF, RL = 10 Ω(1) 2.3 µs
CL = 10µF, RL = Open(1) 3150
(1) See the Fall Time (tFALL) and Quick Output Discharge (QOD) section for information on how RL and CL affect Fall Time.
(2) Devices without Quick Output Discharge (QOD) may not discharge completely.
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6.7 Typical Characteristics
6.7.1 Typical Electrical Characteristics
The typical characteristics curves in this section apply to all devices unless otherwise noted.
Temperature (°C)
RON (m:)
-40 -20 0 20 40 60 80 100 120
40
60
80
100
120
140
160
180
200
220
D004
1 V
1.2 V
1.8 V
3.6 V
5 V
Enabled
Figure 6-1. ON-Resistance vs Temperature
VIN (V)
RON (m:)
1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
40
60
80
100
120
140
160
180
200
220
D003
105qC
85qC
25qC
40qC
Enabled
Figure 6-2. ON-Resistance vs Input voltage
VIN (V)
ISD,VIN (nA)
1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
0
5
10
15
20
25
30
35
40
45
50
D002
85qC
25qC
40qC
TPS22916C, TPS22916CN, TPS22916B VON ≤ VIL
Figure 6-3. Shutdown Current
VIN (V)
ISD,VIN (nA)
1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
0
50
100
150
200
250
D015
85°C
15°C
40°C
TPS22916CL, TPS22916BL,
TPS22916CNL
VON ≥ VIH
Figure 6-4. Shutdown Current (Active Low)
VIN (V)
IQ,VIN (nA)
1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
300
350
400
450
500
550
600
650
700
750
800
D001
85qC
25qC
40qC
Enabled
Figure 6-5. Quiescent Current
–40°C to +85°C
Figure 6-6. ON Pin Threshold
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6.7.1 Typical Electrical Characteristics (continued)
The typical characteristics curves in this section apply to all devices unless otherwise noted.
Temperature (qC)
RPD (k:)
-40 -20 0 20 40 60 80 100
650
700
750
800
850
900
950
1000
1050
D005
VON ≤ VIL
Figure 6-7. ON Pin Smart Pulldown
VIN (V)
QOD (:)
1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
140
160
180
200
220
240
260
D007
85qC
25qC
40qC
TPS22916C, TPS22916CL, TPS22916B, TPS22916BL
Figure 6-8. Quick Output Discharge
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6.7.2 Typical Switching Characteristics
VIN (V)
tON (Ps)
1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
100
150
200
250
300
350
400
450
500
550
600
D009
85°C
25°C
40°C
CL = 0.1 µF RL = 10 Ω
Figure 6-9. Fast Turn-On Time
TPS22916B VIN = 5 V CL = 0.1 μF RL = 10 Ω
Figure 6-10. Fast Turn-On at 5 V
VIN (V)
tRISE (Ps)
1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
50
75
100
125
150
175
200
225
250
275
D010
85qC
25qC
40qC
CL = 0.1 µF RL = 10 Ω
Figure 6-11. Fast Rise Time
TPS22916B VIN = 3.6 V CL = 0.1 μF RL = 10 Ω
Figure 6-12. Fast Turn-On at 3.6 V
VIN (V)
SRON (mV/Ps)
1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
0
20
40
60
80
D008
85qC
25qC
40qC
CL = 0.1 µF RL = 10 Ω
Figure 6-13. Fast Slew Rate
TPS22916B VIN = 1 V CL = 0.1 μF RL = 10 Ω
Figure 6-14. Fast Turn-On at 1 V
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6.7.2 Typical Switching Characteristics (continued)
VIN (V)
tON (Ps)
1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
100
150
200
250
300
350
400
450
500
550
D016
10 PF
1 PF
0.1 PF
RL = 10 Ω TPS22916B
Figure 6-15. Fast Turn-On vs Load Capacitance
VIN (V)
tON (Ps)
1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
100
200
300
400
500
600
700
D017
3 :
10 :
Open
CL = 10 µF TPS22916B
Figure 6-16. Fast Turn-On vs Load Resistance
VIN (V)
tR (Ps)
1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
60
90
120
150
180
210
240
270
D018
10 µF
1 µF
0.1 µF
RL = 10 Ω TPS22916B
Figure 6-17. Fast Rise Time vs Load Capacitance
VIN (V)
tR (Ps)
1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
50
100
150
200
250
300
350
400
D019
3 :
10 :
Open
CL = 10 µF TPS22916B
Figure 6-18. Fast Rise Time vs Load Resistance
VIN (V)
SRON (mV/Ps)
1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
0
20
40
60
80
D020
10 µF
1 µF
0.1 µF
RL = 10 Ω TPS22916B
Figure 6-19. Fast Slew Rate vs Load Capacitance
VIN (V)
SRON (mV/Ps)
1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
0
20
40
60
80
D021
3 :
10 :
Open
CL = 10 µF TPS22916B
Figure 6-20. Fast Slew Rate vs Load Resistance
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6.7.2 Typical Switching Characteristics (continued)
VIN (V)
tON (Ps)
1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
0
1000
2000
3000
4000
5000
6000
7000
8000
D013
85qC
25qC
40qC
CL = 0.1 µF RL = 10 Ω
Figure 6-21. Slow Turn-On Time
TPS22916C VIN = 5 V CL = 0.1 μF RL = 10 Ω
Figure 6-22. Slow Turn-On at 5 V
VIN (V)
tRISE (Ps)
1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
500
1000
1500
2000
2500
3000
3500
D014
85qC
25qC
40qC
CL = 0.1 µF RL = 10 Ω
Figure 6-23. Slow Rise Time
TPS22916C VIN = 3.6 V CL = 0.1 μF RL = 10 Ω
Figure 6-24. Slow Turn-On at 3.6 V
VIN (V)
SRON (mV/Ps)
1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
0
1
2
3
4
5
6
D012
85qC
25qC
40qC
CL = 0.1 µF RL = 10 Ω
Figure 6-25. Slow Slew Rate
TPS22916C VIN = 1 V CL = 0.1 μF RL = 10 Ω
Figure 6-26. Slow Turn-On at 1 V
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6.7.2 Typical Switching Characteristics (continued)
VIN (V)
tON (Ps)
1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
1000
1500
2000
2500
3000
3500
4000
4500
5000
5500
6000
D022
100 µF
1 µF
0.1 µF
RL = 10 Ω TPS22916C TPS22916CN TPS22916CL
Figure 6-27. Slow Turn-On vs Load Capacitance
VIN (V)
tON (Ps)
1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
1000
2000
3000
4000
5000
6000
7000
D023
3 :
10 :
Open
CL = 100 µF TPS22916C TPS22916CN TPS22916CL
Figure 6-28. Slow Turn-On vs Load Resistance
VIN (V)
tR (Ps)
1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
600
900
1200
1500
1800
2100
2400
2700
D024
100 µF
1 µF
0.1 µF
RL = 10 Ω TPS22916C TPS22916CN TPS22916CL
Figure 6-29. Slow Rise Time vs Load Capacitance
VIN (V)
tR (Ps)
1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
600
900
1200
1500
1800
2100
2400
2700
3000
3300
3600
D025
3 :
10 :
Open
CL = 100 µF TPS22916C TPS22916CN TPS22916CL
Figure 6-30. Slow Rise Time vs Load Resistance
VIN (V)
SRON (mV/Ps)
1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
0
1
2
3
4
5
6
D026
100 µF
1 µF
0.1 µF
RL = 10 Ω TPS22916C TPS22916CN TPS22916CL
Figure 6-31. Slow Slew Rate vs Load Capacitance
VIN (V)
SRON (mV/Ps)
1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
0
1
2
3
4
5
6
D027
3 :
10 :
Open
CL = 100 µF TPS22916C TPS22916CN TPS22916CL
Figure 6-32. Slow Slew Rate vs Load Resistance
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I TEXAS INSTRUMENTS . znnv Janus mm _ ivvsllflflnux mm“ v "mm ”W nun 0mm." 2 231m 50000
6.7.2 Typical Switching Characteristics (continued)
VIN (V)
tOFF (Ps)
1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
5
10
15
20
25
30
35
40
45
D011
85°C
25°C
40°C
Figure 6-33. Turn-Off Time TPS22916CL VIN = 5 V CL = 0.1 μF RL = 10 Ω
Figure 6-34. Turn-Off at 5 V (Active Low)
CL (PF)
tFALL (Ps)
1 10 100
5
10
100
1000
10000
5000050000
D028
3 :
10 :
Open
VIN = 1 V to 5.5 V TPS22916C TPS22916CL TPS22916B
Figure 6-35. Fall Time
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7 Parameter Measurement Information
L
H
TPS22916xx
VIN VOUT
RL
CL
ON GND
VIN
+
±
CIN
Copyright © 2017, Texas Instruments Incorporated
Figure 7-1. TPS22916 Test Circuit
tON
VON
VOUT
VIH
10%
VIL
90%
90%
10%
tFALL
tDELAY
tRISE
tOFF
SRON
Figure 7-2. TPS22916 Timing Waveform
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I TEXAS INSTRUMENTS EZI Reverse Cuuenl IN Blocking our conno‘ Log-c Dnvev Sman Pull Down Reslslance l I QOD Reswslance E (Nol m TPSZZEISCN) GND
8 Detailed Description
8.1 Overview
This family of devices are single channel, 2-A load switches in ultra-small, space saving 4-pin WCSP package.
These devices implement a low resistance P-channel MOSFET with a controlled rise time for applications that
must limit inrush current.
These devices are designed to have very low leakage current during OFF state. This design prevents
downstream circuits from pulling high standby current from the supply. Integrated control logic, driver, power
supply, and output discharge FET eliminates the need for additional external components, which reduces
solution size and BOM count.
8.2 Functional Block Diagram
8.3 Feature Description
8.3.1 On and Off Control
The ON pin controls the state of the switch. The ON pin is compatible with standard GPIO logic threshold. the
pin can be used with any microcontroller with 1.2-V, 1.8-V, 2.5-V, 3.3-V, or 5.5-V GPIO.
8.3.2 Fall Time (tFALL) and Quick Output Discharge (QOD)
The TPS22916B, TPS22916BL, TPS22916C, and TPS22916CL include a Quick Output Discharge feature.
When the switch is disabled, a discharge resistor is connected between VOUT and GND. This resistor has a
typical value of QOD and prevents the output from floating while the switch is disabled.
As load capacitance and load resistance increase: tFALL increases. The larger the load resistance or load
capacitance is, the longer it takes to discharge the capacitor, resulting in a longer fall time.
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The output fall time is determined by how quickly the load capacitance is discharged and can be found using
Equation 1 .
tFALL = – (RDIS) × CL × ln (V10% / V90%)(1)
Where
• V10% is 10% of the initial output voltage
• V90% is 90% of the initial output voltage
• RDIS is the result of the QOD resistance in parallel with the Load Resistance RL
• CL is the load capacitance
With the Quick Output Discharge feature, the QOD resistance is in parallel with RL. This provides a lower total
load resistance as seen from the load capacitance which discharges the capacitance faster resulting in a smaller
tFALL.
8.3.3 Full-Time Reverse Current Blocking
In a scenario where the device is enabled and VOUT is greater than VIN there is potential for reverse current to
flow through the pass FET or the body diode. When the reverse current threshold (IRCB) is exceeded, the switch
is disabled within tRCB. The switch remains off and block reverse current as long as the reverse voltage condition
exists. After VOUT has dropped below the VRCB release threshold the TPS22916xx turns back on with slew rate
control.
8.4 Device Functional Modes
Table 8-1 describes the state for each variant as determined by the ON pin.
Table 8-1. Device Function Table
ON TPS22916B TPS22916BL TPS22916C TPS22916CN TPS22916CL TPS22916CNL
≤ VIL Disabled Enabled Disabled Disabled Enabled Enabled
≥ VIH Enabled Disabled Enabled Enabled Disabled Disabled
Table 8-2 shows when QOD is active for each variant.
Table 8-2. QOD Function Table
Device TPS22916B TPS22916BL TPS22916C TPS22916CN TPS22916CL TPS22916CNL
Enabled No No No No No No
Disabled Yes Yes Yes No Yes No
Table 8-3 shows when the ON pin smart pulldown is active.
Table 8-3. Smart-ON Pulldown
VON Pulldown
≤ VIL Connected
≥ VIH Disconnected
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9 Application and Implementation
Note
Information in the following applications sections is not part of the TI component specification,
and TI does not warrant its accuracy or completeness. TI’s customers are responsible for
determining suitability of components for their purposes, as well as validating and testing their design
implementation to confirm system functionality.
9.1 Application Information
This section highlights some of the design considerations when implementing this device in various applications.
A PSPICE model for this device is also available in the product page of this device.
9.2 Typical Application
L
H
TPS22916xx
VIN VOUT
RL
CL
ON GND
VIN
+
±
CIN
Copyright © 2017, Texas Instruments Incorporated
Figure 9-1. Typical Application
9.2.1 Design Requirements
For this design example, below, use the input parameters shown in Table 9-1.
Table 9-1. Design Parameters
Design Parameter Example Value
Input voltage (VIN) 3.6 V
Load capacitance (CL) 47 μF
Maximum inrush current (IRUSH) 300 mA
9.2.2 Detailed Design Procedure
9.2.2.1 Maximum Inrush Current
When the switch is enabled, the output capacitors must be charged up from 0 V to VIN voltage. This charge
arrives in the form of inrush current. Inrush current can be calculated using the following equation:
IRUSH = CL × SRON (2)
IRUSH = 47 μF × 3.2 mV/μs (3)
IRUSH = 150 mA (4)
The TPS22916x offers multiple rise time options to control the inrush current during turn-on. The appropriate
device can be selected based upon the maximum acceptable slew rate which can be calculated using the design
requirements and the inrush current equation. In this case, the TPS22916C provides a slew rate slow enough to
limit the inrush current to the desired amount.
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I TEXAS INSTRUMENTS mun I svsms m an; I52 1m
9.2.3 Application Curve
VIN = 3.6 V CL = 47 μF RL = Open
TPS22916C TA = 25°C
Figure 9-2. Inrush Current
10 Power Supply Recommendations
The device is designed to operate with a VIN range of 1 V to 5.5 V. The VIN power supply must be well
regulated and placed as close to the device terminal as possible. The power supply must be able to withstand all
transient load current steps. In most situations, using an input capacitance (CIN) of 1 µF is sufficient to prevent
the supply voltage from dipping when the switch is turned on. In cases where the power supply is slow to
respond to a large transient current or large load current step, additional bulk capacitance can be required on the
input.
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I TEXAS INSTRUMENTS v Oi 1333/) (E3?!) 0—?— s T m m T \/ \/ em
11 Layout
11.1 Layout Guidelines
For best performance, all traces must be as short as possible. To be most effective, the input and output
capacitors must be placed close to the device to minimize the effects that parasitic trace inductances can have
on normal operation. Using wide traces for VIN, VOUT, and GND helps minimize the parasitic electrical effects.
11.2 Layout Example
Equation 3 shows an example for these devices. Notice the connection to system ground between the VOUT
Bypass Capacitor ground and the GND pin of the load switch,. This connection creates a ground barrier which
helps to reduce the ground noise seen by the device.
A1
Gnd
Via
VIA to Power Ground Plane
V Bypass
Capacitor
IN V Bypass
Capacitor
OUT
To GPIO
control
B2 B1
VOUT
A2
VIN
ON GND
Gnd
Via
Figure 11-1. TPS22916xx Layout
11.3 Thermal Considerations
The maximum IC junction temperature must be restricted to 125°C under normal operating conditions. To
calculate the maximum allowable dissipation, PD(max) for a given output current and ambient temperature, use
Equation 5 as a guideline:
J(MAX) A
D(MAX)
θJA
T T
PR
-
=
(5)
Where,
PD(max) = maximum allowable power dissipation
TJ(max) = maximum allowable junction temperature
TA = ambient temperature for the device
θJA = junction to air thermal impedance. See the Thermal Information section.
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12 Device and Documentation Support
12.1 Documentation Support
12.1.1 Related Documentation
For related documentation see the following:
Texas Instruments, TPS22916 Load Switch Evaluation Module User's Guide
12.2 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on
Subscribe to updates to register and receive a weekly digest of any product information that has changed. For
change details, review the revision history included in any revised document.
12.3 Support Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
12.4 Trademarks
TI E2E™ is a trademark of Texas Instruments.
All trademarks are the property of their respective owners.
12.5 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
12.6 Glossary
TI Glossary This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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13.1 Tape and Reel Information
Reel Width (W1)
REEL DIMENSIONS
A0
B0
K0
W
Dimension designed to accommodate the component length
Dimension designed to accommodate the component thickness
Overall width of the carrier tape
Pitch between successive cavity centers
Dimension designed to accommodate the component width
TAPE DIMENSIONS
K0 P1
B0 W
A0
Cavity
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE
Pocket Quadrants
Sprocket Holes
Q1 Q1
Q2 Q2
Q3 Q3Q4 Q4
Reel
Diameter
User Direction of Feed
P1
Device Package
Type
Package
Drawing Pins SPQ
Reel
Diameter
(mm)
Reel
Width W1
(mm)
A0
(mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
(mm)
Pin1
Quadrant
TPS22916BYFPR DSBGA YFP 4 3000 180.0 8.4 0.86 0.86 0.59 4.0 8.0 Q1
TPS22916BYFPT DSBGA YFP 4 250 180.0 8.4 0.86 0.86 0.59 4.0 8.0 Q1
TPS22916CLYFPR DSBGA YFP 4 3000 180.0 8.4 0.86 0.86 0.59 4.0 8.0 Q1
TPS22916CLYFPT DSBGA YFP 4 250 180.0 8.4 0.86 0.86 0.59 4.0 8.0 Q1
TPS22916CNYFPR DSBGA YFP 4 3000 180.0 8.4 0.86 0.86 0.59 4.0 8.0 Q1
TPS22916CNYFPT DSBGA YFP 4 250 180.0 8.4 0.86 0.86 0.59 4.0 8.0 Q1
TPS22916CYFPR DSBGA YFP 4 3000 180.0 8.4 0.86 0.86 0.59 4.0 8.0 Q1
TPS22916CYFPT DSBGA YFP 4 250 180.0 8.4 0.86 0.86 0.59 4.0 8.0 Q1
TPS22916CNLYFPR DSBGA YFP 4 3000 180.0 8.4 0.86 0.86 0.59 4.0 8.0 Q1
TPS22916BLYFPR DSBGA YFP 4 3000 180.0 8.4 0.86 0.86 0.59 4.0 8.0 Q1
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TAPE AND REEL BOX DIMENSIONS
Width (mm)
W
L
H
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
TPS22916BYFPR DSBGA YFP 4 3000 182.0 182.0 20.0
TPS22916BYFPT DSBGA YFP 4 250 182.0 182.0 20.0
TPS22916CLYFPR DSBGA YFP 4 3000 182.0 182.0 20.0
TPS22916CLYFPT DSBGA YFP 4 250 182.0 182.0 20.0
TPS22916CNYFPR DSBGA YFP 4 3000 182.0 182.0 20.0
TPS22916CNYFPT DSBGA YFP 4 250 182.0 182.0 20.0
TPS22916CYFPR DSBGA YFP 4 3000 182.0 182.0 20.0
TPS22916CYFPT DSBGA YFP 4 250 182.0 182.0 20.0
TPS22916CNLYFPR DSBGA YFP 4 3000 182.0 182.0 20.0
TPS22916BLYFPR DSBGA YFP 4 3000 182.0 182.0 20.0
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PACKAGE OUTLINE
C
0.5 MAX
0.19
0.13
0.4
TYP
0.4
TYP
4X 0.25
0.21
B E A
D
4223507/A 01/2017
DSBGA - 0.5 mm max height
YFP0004
DIE SIZE BALL GRID ARRAY
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
BALL A1
CORNER
SEATING PLANE
BALL TYP 0.05 C
A
B
2
0.015 C A B SYMM
SYMM
1
SCALE 10.000
D: Max = 0.81 mm, Min = 0.75 mm
E: Max = 0.81 mm, Min = 0.75 mm
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EXAMPLE BOARD LAYOUT
4X ( 0.23)
(0.4) TYP
(0.4) TYP
( 0.23)
METAL
0.05 MAX
SOLDER MASK
OPENING
METAL UNDER
SOLDER MASK
( 0.23)
SOLDER MASK
OPENING
0.05 MIN
4223507/A 01/2017
DSBGA - 0.5 mm max height
YFP0004
DIE SIZE BALL GRID ARRAY
NOTES: (continued)
3. Final dimensions may vary due to manufacturing tolerance considerations and also routing constraints.
For more information, see Texas Instruments literature number SNVA009 (www.ti.com/lit/snva009).
SOLDER MASK DETAILS
NOT TO SCALE
SYMM
SYMM
LAND PATTERN EXAMPLE
EXPOSED METAL SHOWN
SCALE:50X
A
B
12
NON-SOLDER MASK
DEFINED
(PREFERRED)
EXPOSED
METAL
SOLDER MASK
DEFINED
EXPOSED
METAL
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EXAMPLE STENCIL DESIGN
(0.4) TYP
(0.4) TYP
4X ( 0.25) (R0.05) TYP
METAL
TYP
4223507/A 01/2017
DSBGA - 0.5 mm max height
YFP0004
DIE SIZE BALL GRID ARRAY
NOTES: (continued)
4. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release.
SYMM
SYMM
SOLDER PASTE EXAMPLE
BASED ON 0.1 mm THICK STENCIL
SCALE:50X
A
B
12
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I TEXAS INSTRUMENTS Samples Samples Samples Samples Samples Sample: Sample: Samples Samples Samples
PACKAGE OPTION ADDENDUM
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Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status
(1)
Package Type Package
Drawing Pins Package
Qty Eco Plan
(2)
Lead finish/
Ball material
(6)
MSL Peak Temp
(3)
Op Temp (°C) Device Marking
(4/5)
Samples
TPS22916BLYFPR ACTIVE DSBGA YFP 4 3000 RoHS & Green SNAGCU Level-1-260C-UNLIM -40 to 85 Q
TPS22916BYFPR ACTIVE DSBGA YFP 4 3000 RoHS & Green SAC396 | SNAGCU Level-1-260C-UNLIM -40 to 85 (BA, R)
TPS22916BYFPT ACTIVE DSBGA YFP 4 250 RoHS & Green SAC396 | SNAGCU Level-1-260C-UNLIM -40 to 85 (BA, R)
TPS22916CLYFPR ACTIVE DSBGA YFP 4 3000 RoHS & Green SAC396 Level-1-260C-UNLIM -40 to 85 B9
TPS22916CLYFPT ACTIVE DSBGA YFP 4 250 RoHS & Green SAC396 Level-1-260C-UNLIM -40 to 85 B9
TPS22916CNLYFPR ACTIVE DSBGA YFP 4 3000 RoHS & Green SNAGCU Level-1-260C-UNLIM -40 to 85 S
TPS22916CNYFPR ACTIVE DSBGA YFP 4 3000 RoHS & Green SAC396 Level-1-260C-UNLIM -40 to 85 B8
TPS22916CNYFPT ACTIVE DSBGA YFP 4 250 RoHS & Green SAC396 Level-1-260C-UNLIM -40 to 85 B8
TPS22916CYFPR ACTIVE DSBGA YFP 4 3000 RoHS & Green SAC396 Level-1-260C-UNLIM -40 to 85 B7
TPS22916CYFPT ACTIVE DSBGA YFP 4 250 RoHS & Green SAC396 Level-1-260C-UNLIM -40 to 85 B7
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
I TEXAS INSTRUMENTS
PACKAGE OPTION ADDENDUM
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Addendum-Page 2
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6) Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
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