DSS5240T Datasheet by Diodes Incorporated

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USE ZXTP5240F-7 Lead Ire: Greer D885240T 205 (a
DSS5240T
40V PNP LOW SATURATION TRANSISTOR IN SOT23
Features
BVCEO > -40V
IC = -2A High Continuous Collector Current
ICM = -3A Peak Pulse Current
Low Saturation Voltage -225mV Max @ IC = -1A
RCE(SAT) = 90m at 0.5A for a Low Equivalent On-Resistance
730mW Power Dissipation
Complimentary NPN Type: DSS4240T
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: FinishMatte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight 0.008 grams (Approximate)
Application
Gate Driving MOSFETs and IGBTs
Load Switch
DC-DC Converters
Battery Charging
Ordering Information (Note 4 & 5)
Product
Compliance
Marking
Reel Size (inches)
Quantity per Reel
DSS5240T-7
NRND (Use ZXTP5240F-7)
ZP2
7
3000
DSS5240T-13
NRND (Use ZXTP5240F-7)
ZP2
13
10,000
DSS5240TQ-7
NRND
ZP2
7
3000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to https://www.diodes.com/quality/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
6. NRND Not recommended for new design.
Marking Information
Date Code Key
Year
2013
2014
2015
2016
2017
2018
2019
2020
2021
2022
2023
Code
A
B
C
D
E
F
G
H
I
J
K
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
SOT23
Top View
Pin-Out
Top View
Device Symbol
C
E
B
C
E
B
ZP2 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex:
C = 2015)
M = Month (ex: 9 = September)
ZP2
YM
NOT RECOMMENDED FOR NEW DESIGN
USE ZXTP5240F-7
DSS5240T
Document number: DS31591 Rev. 6 - 3
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© Diodes Incorporated
ms“ D385240T
DSS5240T
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-40 V
Emitter-Base Voltage
VEBO
-5 V
Peak Pulse Collector Current
ICM
-3
A
Continuous Collector Current
IC
-2
A
Base Current
IB
-300
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 7)
PD
730
mW
Power Dissipation (Note 8)
PD
600
mW
Thermal Resistance, Junction to Ambient Air (Note 7)
RϴJA
171 °C/W
Thermal Resistance, Junction to Ambient Air (Note 8)
RϴJA
209 °C/W
Thermal Resistance, Junction to Lead (Note 9)
RϴJL
75 °C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
ESD Ratings (Note 10)
Characteristic
Symbol
Value
Unit
JEDEC Class
Electrostatic DischargeHuman Body Model ESD HBM 4000 V 3A
Electrostatic DischargeMachine Model ESD MM 400 V C
Notes: 7. For a device mounted with the collector lead on 15mm × 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under
still air conditions whilst operating in a steady-state.
8. Same as Note 7, except the device is mounted on minimum recommended pad layout.
9. Thermal resistance from junction to solder-point (at the end of the collector lead).
10. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
DSS5240T
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m5. Dsssz40T
DSS5240T
Thermal Characteristics and Derating Information
100m 110
10m
100m
1
10 15mm x 15mm 1oz Copper
Single Pulse
T
amb
=25°C
V
CE(sat)
Limited
100µs
1ms
10ms
100ms
1s
DC
Safe Operating Area
-I
C
Collector Current (A)
-V
CE
Collector-Emitter Voltage (V)
020 40 60 80 100 120 140 160
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8 15mm x 15mm 1oz Copper
Derating Curve
Temperature (°C)
Max Power Dissipation (W)
100µ 1m 10m 100m 110 100 1k
0
40
80
120
160 T
amb
=25°C
15mm x 15mm 1oz Copper
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Thermal Resistance (°C/W)
Pulse Width (s)
100µ 1m 10m 100m 110 100 1k
1
10
100 Single Pulse
T
amb
=25°C
15mm x 15mm 1oz Copper
Pulse Power Dissipation
Pulse Width (s)
Maximum Power (W)
DSS5240T
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WES“ 08352401
DSS5240T
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Conditions
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BVCBO
-40
V
IC = -100µA
Collector-Emitter Breakdown Voltage (Note 11)
BVCEO
-40 V
IC = -10mA
Emitter-Base Breakdown Voltage
BVEBO
-5 V
IE = -100µA
Collector-Base Cutoff Current ICBO -100
nA
VCB = -30V, IE = 0
-50 µA
VCB = -30V, IE = 0, TA = +150°C
Emitter-Base Cutoff Current
IEBO
-100
nA
VEB = -4V, IC = 0
ON CHARACTERISTICS (Note 11)
DC Current Gain hFE
300
VCE = -2V, IC = -0.1A
260 VCE = -2V, IC = -0.5A
210 V
CE
= -2V, I
C
= -1A
100 V
CE
= -2V, I
C
= -2A
Collector-Emitter Saturation Voltage VCE(SAT)
-100
mV
I
C
= -100mA, I
B
= -1mA
45
-110
IC = -500mA, IB = -50mA
-225
IC = -750mA, IB = -15mA
-225
IC = -1A, IB = -50mA
-350
IC = -2A, IB = -200mA
Equivalent On-Resistance
RCE(SAT)
90
220
m
IC = -500mA, IB = -50mA
Base-Emitter Saturation Voltage
VBE(SAT)
-1.1
V
IC = -2A, IB = -200mA
Base-Emitter Turn-on Voltage
VBE(ON)
-0.75
V
VCE = -2V, IC = -100mA
SMALL SIGNAL CHARACTERISTICS
Transition Frequency fT 100 MHz VCE = -10V, IC = -100mA,
f = 100MHz
Output Capacitance
Cob
28
pF
VCB = -10V, f = 1MHz
Note: 11. Measured under pulsed conditions. Pulse width 300µs. Duty cycle 2%.
Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0 1 2 3 4 5 6 7 8 9 10
-I , COLLECTOR CURRENT (A)
C
I = -1mA
B
I = -2mA
B
I = -3mA
B
I = -4mA
B
I = -5mA
B
-V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Figure 1 Typical Collector Current
vs. Collector-Emitter Voltage
110 100 1,000 10,000
-I , COLLECTOR CURRENT (mA)
C
Figure 2 Typical DC Current Gain vs. Collector Current
10
100
10,000
h , DC CURRENT GAIN
FE
1,000
T = 15C
A
T = 25°C
A
T = -55°C
A
T = 85°C
A
V = -2V
CE
DSS5240T
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WES“ 05552401 vs. Co‘lector Current vs. Collector Current \ \ vs. Col‘ecmr Current vs CcHectDr Current
DSS5240T
110 100 1,000 10,000
-I , COLLECTOR CURRENT (mA)
C
Figure 3 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
0.001
0.01
0.1
-V , COLLECTOR-EMITTER
SATURATION
CE(SAT)
VOLTAGE (V)
1
I /I = 10
CB
T = 85°C
A
T = 25°C
A
T = -55°C
A
T = 150°C
A
110 100 1,000 10,000
-I , COLLECTOR CURRENT (mA)
C
Figure 4 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
0
0.2
0.4
0.6
0.8
1.0
1.2
-V , BASE-EMITTER TURN-ON VOLTAGE (V)
BE(ON)
T = 150°C
A
T = 25°C
A
T = -55°C
A
T = 85°C
A
V = -2V
CE
110 100 1,000 10,000
-I , COLLECTOR CURRENT (mA)
C
Figure 5 Typical Base-Emitter Saturation Voltage
vs. Collector Current
0.2
0.4
0.6
0.8
1.0
1.2
-V , BASE-EMITTER SATURATION VOLTAGE (V)
BE(SAT)
T = 150°C
A
T = 2C
A
T = -55°C
A
T = 8C
A
I = 10
CB
/I
0.1 110 100
V , REVERSE VOLTAGE (V)
R
Figure 6 Typical Capacitance Characteristics
1
10
100
1,000
CAPACITANCE (pF)
C
ibo
C
obo
f = 1MHz
010 20 30 40 50 60 70 80 90 100
-I , COLLECTOR CURRENT (mA)
C
Figure 7 Typical Gain-Bandwidth Product
vs. Collector Current
1
10
100
1,000
f , GAIN-BANDWIDTH PRODUCT (MHz)
T
V = -10V
f = 100MHz
CE
DSS5240T
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D885240T
DSS5240T
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23
J
K1 K
L1
GAUGE PLANE
0.25
H
L
M
All 7°
A
CB
D
G
F
a
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03
0.915
F
0.45
0.60
0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013
0.10
0.05
K
0.890
1.00
0.975
K1
0.903
1.10
1.025
L
0.45
0.61
0.55
L1
0.25
0.55
0.40
M
0.085
0.150
0.110
a
All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23
X
Y
Y1 C
X1
Dimensions
Value (in mm)
C
2.0
X
0.8
X1
1.35
Y
0.9
Y1
2.9
DSS5240T
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DSS5240T
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2018, Diodes Incorporated
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