TO-247-2 Single Diodes

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Technology
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
TO-247-2
APT30D60BG
DIODE STD 600V 30A TO247 [B]
Microchip Technology
9,022
In Stock
1 : ₩3,408.00000
Tube
-
Tube
Active
Standard
600 V
30A
1.8 V @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
85 ns
250 µA @ 600 V
-
-
-
Through Hole
TO-247-2
TO-247 [B]
-55°C ~ 175°C
1,698
In Stock
1 : ₩3,497.00000
Bulk
Bulk
Active
Standard
600 V
60A
1.68 V @ 60 A
Fast Recovery =< 500ns, > 200mA (Io)
81 ns
50 µA @ 600 V
-
-
-
Through Hole
TO-247-2
TO-247AC-2L
-55°C ~ 175°C
APT75DQ120BG
APT75DQ120BG
DIODE STD 1200V 75A TO247 [B]
Microchip Technology
1,266
In Stock
1 : ₩4,643.00000
Tube
-
Tube
Active
Standard
1200 V
75A
3.1 V @ 75 A
Fast Recovery =< 500ns, > 200mA (Io)
325 ns
100 µA @ 1200 V
-
-
-
Through Hole
TO-247-2
TO-247 [B]
-55°C ~ 175°C
TO-247-2
APT60D60BG
DIODE STD 600V 60A TO247 [B]
Microchip Technology
7,634
In Stock
1 : ₩4,896.00000
Tube
-
Tube
Active
Standard
600 V
60A
1.8 V @ 60 A
Fast Recovery =< 500ns, > 200mA (Io)
130 ns
250 µA @ 600 V
-
-
-
Through Hole
TO-247-2
TO-247 [B]
-55°C ~ 175°C
APT60S20BG
APT60S20BG
DIODE SCHOTTKY 200V 75A TO247
Microchip Technology
2,472
In Stock
1 : ₩5,759.00000
Tube
-
Tube
Active
Schottky
200 V
75A
900 mV @ 60 A
Fast Recovery =< 500ns, > 200mA (Io)
55 ns
1 mA @ 200 V
-
-
-
Through Hole
TO-247-2
TO-247 [B]
-55°C ~ 150°C
TO-247-2
GP3D005A170B
DIODE SIL CARB 1700V 21A TO2472
SemiQ
2,126
In Stock
1 : ₩6,378.00000
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
1700 V
21A
1.65 V @ 5 A
No Recovery Time > 500mA (Io)
0 ns
20 µA @ 1700 V
347pF @ 1V, 1MHz
-
-
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
TO-247-2
GD05MPS17H
DIODE SIL CARB 1700V 15A TO2472
GeneSiC Semiconductor
942
In Stock
1 : ₩7,774.00000
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
1700 V
15A
1.8 V @ 5 A
No Recovery Time > 500mA (Io)
0 ns
20 µA @ 1700 V
361pF @ 1V, 1MHz
-
-
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
TO-247-2
APT100S20BG
DIODE SCHOTTKY 200V 120A TO247
Microchip Technology
4,037
In Stock
1 : ₩8,513.00000
Tube
-
Tube
Active
Schottky
200 V
120A
950 mV @ 100 A
Fast Recovery =< 500ns, > 200mA (Io)
70 ns
2 mA @ 200 V
-
-
-
Through Hole
TO-247-2
TO-247 [B]
-55°C ~ 150°C
TO-247-2-Series
DSEP30-12A
DIODE STANDARD 1200V 30A TO247AD
IXYS
3,527
In Stock
1 : ₩8,781.00000
Tube
Tube
Active
Standard
1200 V
30A
2.74 V @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
40 ns
250 µA @ 1200 V
-
-
-
Through Hole
TO-247-2
TO-247AD
-55°C ~ 175°C
TO-247-2-Series
DH40-18A
DIODE STANDARD 1800V 40A TO247AD
IXYS
1,045
In Stock
450
Factory
1 : ₩10,224.00000
Tube
Tube
Active
Standard
1800 V
40A
2.7 V @ 40 A
Fast Recovery =< 500ns, > 200mA (Io)
300 ns
100 µA @ 1800 V
-
-
-
Through Hole
TO-247-2
TO-247AD
-40°C ~ 150°C
TO-247-2-Series
DSEI120-06A
DIODE STANDARD 600V 77A TO247AD
IXYS
980
In Stock
1 : ₩11,087.00000
Tube
Tube
Active
Standard
600 V
77A
1.3 V @ 70 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
3 mA @ 600 V
-
-
-
Through Hole
TO-247-2
TO-247AD
-40°C ~ 150°C
TO-247-2-Series
DSEI60-06A
DIODE STANDARD 600V 60A TO247AD
IXYS
3,391
In Stock
1 : ₩11,668.00000
Tube
-
Tube
Active
Standard
600 V
60A
1.8 V @ 70 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
200 µA @ 600 V
-
-
-
Through Hole
TO-247-2
TO-247AD
-40°C ~ 150°C
C6D25170H
C6D05170H
DIODE SIL CARB 1700V 21A TO2472
Wolfspeed, Inc.
584
In Stock
1 : ₩16,415.00000
Tube
-
Tube
Active
SiC (Silicon Carbide) Schottky
1700 V
21A
1.7 V @ 5 A
No Recovery Time > 500mA (Io)
0 ns
9 µA @ 1700 V
638pF @ 0V, 1MHz
-
-
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
TO-247-2-Series
DH60-18A
DIODE STANDARD 1800V 60A TO247AD
IXYS
750
In Stock
1 : ₩18,216.00000
Tube
-
Tube
Active
Standard
1800 V
60A
2.04 V @ 60 A
Fast Recovery =< 500ns, > 200mA (Io)
230 ns
200 µA @ 1800 V
32pF @ 1200V, 1MHz
-
-
Through Hole
TO-247-2
TO-247AD
-55°C ~ 150°C
TO-247-2-Series
DSDI60-18A
DIODE STANDARD 1800V 63A TO247AD
IXYS
1,016
In Stock
1 : ₩19,987.00000
Tube
-
Tube
Active
Standard
1800 V
63A
4.1 V @ 70 A
Fast Recovery =< 500ns, > 200mA (Io)
300 ns
2 mA @ 1800 V
-
-
-
Through Hole
TO-247-2
TO-247AD
-40°C ~ 150°C
IDWD20G120C5XKSA1
IDWD40G120C5XKSA1
DIODE SIC 1.2KV 110A PGTO2472
Infineon Technologies
458
In Stock
1 : ₩19,897.00000
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
1200 V
110A
1.65 V @ 40 A
No Recovery Time > 500mA (Io)
0 ns
332 µA @ 1200 V
2592pF @ 1V, 1MHz
-
-
Through Hole
TO-247-2
PG-TO247-2
-55°C ~ 175°C
TO-247-2
GD25MPS17H
DIODE SIL CARB 1700V 56A TO2472
GeneSiC Semiconductor
1,192
In Stock
1 : ₩26,466.00000
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
1700 V
56A
1.8 V @ 25 A
No Recovery Time > 500mA (Io)
0 ns
20 µA @ 1700 V
1083pF @ 1V, 1MHz
-
-
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
IDWD40G200C5XKSA1
IDWD25G200C5XKSA1
DIODE SIC 2000V 77A PGTO2472U01
Infineon Technologies
168
In Stock
1 : ₩27,686.00000
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
2000 V
77A
1.75 V @ 25 A
No Recovery Time > 500mA (Io)
0 ns
375 µA @ 2 kV
2850pF @ 1V, 100kHz
-
-
Through Hole
TO-247-2
PG-TO247-2-U01
-55°C ~ 175°C
ESW6004
UJ3D1725K2
DIODE SIL CARB 1700V 25A TO2472
onsemi
1,811
In Stock
1 : ₩30,610.00000
Tube
-
Tube
Active
SiC (Silicon Carbide) Schottky
1700 V
25A
1.7 V @ 25 A
No Recovery Time > 500mA (Io)
0 ns
360 µA @ 1700 V
1500pF @ 1V, 1MHz
Automotive
AEC-Q101
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
ESW6004
UJ3D1250K2
DIODE SIL CARB 1200V 50A TO2472
onsemi
14,309
In Stock
1 : ₩38,090.00000
Tube
-
Tube
Active
SiC (Silicon Carbide) Schottky
1200 V
50A
1.7 V @ 50 A
No Recovery Time > 500mA (Io)
0 ns
400 µA @ 1200 V
2340pF @ 1V, 1MHz
-
-
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
C3D10170H
C4D40120H
DIODE SIL CARB 1200V 128A TO2472
Wolfspeed, Inc.
436
In Stock
1 : ₩42,895.00000
Tube
-
Tube
Active
SiC (Silicon Carbide) Schottky
1200 V
128A
1.8 V @ 40 A
No Recovery Time > 500mA (Io)
0 ns
300 µA @ 1200 V
2809pF @ 0V, 1MHz
-
-
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
TO-247-2
GD60MPS17H
DIODE SIL CARB 1700V 122A TO2472
GeneSiC Semiconductor
385
In Stock
1 : ₩67,715.00000
Tube
Tube
Active
SiC (Silicon Carbide) Schottky
1700 V
122A
1.8 V @ 60 A
Fast Recovery =< 500ns, > 200mA (Io)
-
40 µA @ 1700 V
4577pF @ 1V, 1MHz
-
-
Through Hole
TO-247-2
TO-247-2
-55°C ~ 175°C
TO-247
MSC030SDA330B
DIODE SIL CARB 3300V 30A TO247
Microchip Technology
48
In Stock
1 : ₩187,628.00000
Tube
-
Tube
Active
SiC (Silicon Carbide) Schottky
3300 V
30A
-
No Recovery Time > 500mA (Io)
0 ns
-
-
-
-
Through Hole
TO-247-2
TO-247
-
TO-247-2
APT30DQ60BG
DIODE STD 600V 30A TO247 [B]
Microchip Technology
1,572
In Stock
1 : ₩1,935.00000
Tube
-
Tube
Active
Standard
600 V
30A
2.4 V @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
30 ns
25 µA @ 600 V
-
-
-
Through Hole
TO-247-2
TO-247 [B]
-55°C ~ 175°C
TO-247-2
APT40DQ60BG
DIODE STD 600V 40A TO247 [B]
Microchip Technology
1,437
In Stock
1 : ₩2,590.00000
Tube
-
Tube
Active
Standard
600 V
40A
2.4 V @ 40 A
Fast Recovery =< 500ns, > 200mA (Io)
25 ns
25 µA @ 600 V
-
-
-
Through Hole
TO-247-2
TO-247 [B]
-55°C ~ 175°C
Showing
of 726

Types of Rectifier Diodes

Standard Rectifier Diodes
  • Standard Diodes (Silicon PN Junction)
    Standard diodes are the most basic type of rectifier diode, made from silicon with a PN junction. They’re commonly used in AC-to-DC converters, power rectification, and general circuit protection. These diodes typically have a forward voltage drop around 0.7V and are best suited for low-frequency switching. Their reverse recovery time (how quickly they stop conducting when switched off) is relatively slow, which limits their use in high-speed applications. They also have low reverse leakage current, which makes them reliable for steady-state operations.

  • Schottky Barrier Diodes (SBD)
    Schottky diodes (SBDs) use a metal-semiconductor junction instead of a traditional PN junction, resulting in faster switching speeds and lower forward voltage drops—often between 0.2V and 0.4V. This makes them ideal for DC-DC converters, high-efficiency power supplies, and circuits where minimizing power loss is critical. However, one drawback of SBDs is their higher reverse leakage current, especially at elevated temperatures, which can be a concern in precision or battery-operated devices.

  • Super Barrier Rectifiers (SBR)
    Super Barrier Rectifiers (SBRs) combine the best traits of standard diodes and Schottky diodes. They offer low forward voltage drop like SBDs, but with significantly lower reverse leakage current and improved reverse voltage handling. SBRs are well-suited for switching power converters, adapters, and automotive electronics, where energy efficiency and thermal stability are important. They’re often a better choice than Schottky diodes when the application involves higher ambient temperatures or larger voltage transients.

  • Avalanche Diodes
    Avalanche diodes are designed to operate reliably in reverse breakdown mode, where they safely conduct current once a specific reverse voltage threshold is exceeded. Unlike standard diodes that can be damaged by breakdown, avalanche diodes are built to handle this condition repeatedly and predictably.
    • In fast switching rectification, avalanche diodes are sometimes preferred over standard PN diodes because of their improved reverse recovery behavior, which reduces switching losses and improves overall converter efficiency. Their ability to withstand high reverse voltage transients without degradation makes them particularly suited for snubber circuits, flyback converters, and hard-switched topologies.

  • Silicon Carbide (SiC) Diodes
    SiC diodes are built from silicon carbide, a wide-bandgap material that allows them to handle very high voltages (600V and up) and extreme temperatures (>150°C). They are ideal for industrial converters, electric vehicle chargers, solar inverters, and motor drives, especially in circuits requiring fast switching and zero reverse recovery time. Although more expensive than silicon-based diodes, their durability and efficiency at high voltages and frequencies often make them the best long-term choice in demanding applications.