Through Hole Single Diodes

Results: 14,302
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Mfr Part #
Quantity Available
Price
Series
Package
Product Status
Technology
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Grade
Qualification
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
DO-35
DIODE STANDARD 100V 200MA DO35
onsemi
673,495
In Stock
2,660,000
Factory
1 : ₩147.00000
Cut Tape (CT)
10,000 : ₩10.38950
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Active
Standard
100 V
200mA
1 V @ 10 mA
Small Signal =< 200mA (Io), Any Speed
4 ns
5 µA @ 75 V
4pF @ 0V, 1MHz
-
-
Through Hole
DO-204AH, DO-35, Axial
DO-35
-55°C ~ 175°C
1N4001
DIODE STANDARD 1000V 1A DO204AC
Diotec Semiconductor
342,028
In Stock
5,000 : ₩34.91580
Tape & Box (TB)
1 : ₩147.00000
Cut Tape (CT)
-
Cut Tape (CT)
Tape & Box (TB)
Active
Standard
1000 V
1A
1.1 V @ 1 A
Standard Recovery >500ns, > 200mA (Io)
1.5 µs
5 µA @ 1000 V
-
-
-
Through Hole
DO-204AC, DO-41, Axial
DO-204AC (DO-41)
-50°C ~ 175°C
DO-35
DIODE STANDARD 100V 200MA DO35
onsemi
248,674
In Stock
1 : ₩147.00000
Bulk
-
Bulk
Active
Standard
100 V
200mA
1 V @ 10 mA
Small Signal =< 200mA (Io), Any Speed
4 ns
5 µA @ 75 V
4pF @ 0V, 1MHz
-
-
Through Hole
DO-204AH, DO-35, Axial
DO-35
-55°C ~ 175°C
DO-41
DIODE STANDARD 1000V 1A DO41
MCC (Micro Commercial Components)
603,656
In Stock
1 : ₩162.00000
Cut Tape (CT)
5,000 : ₩46.01060
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Active
Standard
1000 V
1A
1.1 V @ 1 A
Standard Recovery >500ns, > 200mA (Io)
2 µs
5 µA @ 1000 V
15pF @ 4V, 1MHz
-
-
Through Hole
DO-204AL, DO-41, Axial
DO-41
-55°C ~ 150°C
1N5819
DIODE SCHOTTKY 40V 1A DO41
STMicroelectronics
33,827
In Stock
2,000 : ₩74.21100
Tape & Box (TB)
1 : ₩191.00000
Cut Tape (CT)
-
Cut Tape (CT)
Tape & Box (TB)
Last Time Buy
Schottky
40 V
1A
550 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 40 V
-
-
-
Through Hole
DO-204AL, DO-41, Axial
DO-41
150°C (Max)
1N5818G
DIODE STANDARD 1000V 1A AXIAL
onsemi
111,127
In Stock
1 : ₩206.00000
Bulk
-
Bulk
Active
Standard
1000 V
1A
1.1 V @ 1 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 1000 V
-
-
-
Through Hole
DO-204AL, DO-41, Axial
Axial
-65°C ~ 175°C
1N4002G-T
DIODE STANDARD 1000V 1A DO41
Diodes Incorporated
181,774
In Stock
1,240,000
Factory
1 : ₩235.00000
Cut Tape (CT)
5,000 : ₩72.74120
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Active
Standard
1000 V
1A
1 V @ 1 A
Standard Recovery >500ns, > 200mA (Io)
2 µs
5 µA @ 1000 V
8pF @ 4V, 1MHz
-
-
Through Hole
DO-204AL, DO-41, Axial
DO-41
-65°C ~ 175°C
1N5818G
DIODE STANDARD 1000V 1A AXIAL
onsemi
5,798
In Stock
1 : ₩279.00000
Cut Tape (CT)
5,000 : ₩43.04220
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Active
Standard
1000 V
1A
1.1 V @ 1 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 1000 V
-
-
-
Through Hole
DO-204AL, DO-41, Axial
Axial
-65°C ~ 175°C
150,539
In Stock
1 : ₩294.00000
Cut Tape (CT)
5,500 : ₩65.30545
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Active
Standard
1000 V
1A
1.1 V @ 1 A
Standard Recovery >500ns, > 200mA (Io)
-
5 µA @ 1000 V
15pF @ 4V, 1MHz
-
-
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-50°C ~ 150°C
31-DO-201AD
DIODE STANDARD 1000V 3A DO201AD
Diodes Incorporated
454,912
In Stock
1 : ₩426.00000
Cut Tape (CT)
1,200 : ₩133.57917
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Active
Standard
1000 V
3A
1.1 V @ 3 A
Standard Recovery >500ns, > 200mA (Io)
2 µs
5 µA @ 1000 V
40pF @ 4V, 1MHz
-
-
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 150°C
MUR4100EG
DIODE STANDARD 1000V 3A AXIAL
onsemi
32,745
In Stock
1 : ₩514.00000
Cut Tape (CT)
1,200 : ₩127.64000
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Active
Standard
1000 V
3A
1 V @ 3 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 1000 V
-
-
-
Through Hole
DO-201AA, DO-27, Axial
Axial
-65°C ~ 150°C
20,482
In Stock
3,000 : ₩207.79000
Tape & Box (TB)
1 : ₩514.00000
Cut Tape (CT)
-
Cut Tape (CT)
Tape & Box (TB)
Active
Schottky
100 V
1A
770 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
1 µA @ 100 V
-
-
-
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
175°C (Max)
1N4728A
DIODE STANDARD 1000V 1A DO41
onsemi
17,902
In Stock
1 : ₩514.00000
Cut Tape (CT)
5,000 : ₩123.18980
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Active
Standard
1000 V
1A
1.7 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
75 ns
10 µA @ 1000 V
17pF @ 4V, 1MHz
-
-
Through Hole
DO-204AL, DO-41, Axial
DO-41
-65°C ~ 150°C
MUR4100EG
DIODE STANDARD 1000V 3A AXIAL
onsemi
38,329
In Stock
6,500
Factory
1 : ₩529.00000
Bulk
-
Bulk
Active
Standard
1000 V
3A
1 V @ 3 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 1000 V
-
-
-
Through Hole
DO-201AA, DO-27, Axial
Axial
-65°C ~ 150°C
25,015
In Stock
1 : ₩573.00000
Cut Tape (CT)
5,000 : ₩313.79840
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Active
Avalanche
600 V
2A
1.15 V @ 2.5 A
Standard Recovery >500ns, > 200mA (Io)
4 µs
1 µA @ 600 V
40pF @ 0V, 1MHz
-
-
Through Hole
SOD-57, Axial
SOD-57
-55°C ~ 175°C
30,860
In Stock
1 : ₩632.00000
Cut Tape (CT)
5,000 : ₩352.90520
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Active
Avalanche
1500 V
2A
1.6 V @ 3 A
Standard Recovery >500ns, > 200mA (Io)
20 µs
3 µA @ 1500 V
-
-
-
Through Hole
SOD-57, Axial
SOD-57
140°C (Max)
31-DO-201AD
DIODE SCHOTTKY 100V 5A DO201AD
Diodes Incorporated
4,482
In Stock
1 : ₩676.00000
Cut Tape (CT)
1,200 : ₩403.70167
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Active
Schottky
100 V
5A
800 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 100 V
400pF @ 4V, 1MHz
-
-
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 150°C
MUR4100EG
DIODE STANDARD 100V 3A AXIAL
onsemi
3,191
In Stock
9,600
Factory
1 : ₩676.00000
Cut Tape (CT)
1,200 : ₩179.58750
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Active
Standard
100 V
3A
1 V @ 3 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 100 V
-
-
-
Through Hole
DO-201AA, DO-27, Axial
Axial
-65°C ~ 150°C
8,691
In Stock
1 : ₩735.00000
Cut Tape (CT)
5,500 : ₩277.54691
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Not For New Designs
Standard
2000 V
500mA
1.8 V @ 100 mA
Fast Recovery =< 500ns, > 200mA (Io)
300 ns
5 µA @ 2000 V
-
-
-
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
31-DO-201AD
DIODE SBR 45V 12A DO201AD
Diodes Incorporated
3,961
In Stock
1 : ₩735.00000
Cut Tape (CT)
1,200 : ₩583.30167
Tape & Reel (TR)
Tape & Reel (TR)
Cut Tape (CT)
Active
Super Barrier
45 V
12A
480 mV @ 12 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 45 V
-
-
-
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 150°C
5,342
In Stock
1 : ₩823.00000
Cut Tape (CT)
5,500 : ₩203.33891
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Active
Schottky
40 V
2A
550 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 40 V
-
-
-
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 125°C
19,399
In Stock
1 : ₩911.00000
Cut Tape (CT)
500 : ₩286.46800
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Not For New Designs
Standard
1000 V
6A
950 mV @ 6 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 1000 V
150pF @ 4V, 1MHz
-
-
Through Hole
R-6, Axial
R-6
-55°C ~ 125°C
DO-204AH, DO-35, Axial
DIODE STANDARD 75V 200MA DO204AH
Microchip Technology
15,927
In Stock
1 : ₩911.00000
Bulk
-
Bulk
Active
Standard
75 V
200mA
1.2 V @ 100 mA
Small Signal =< 200mA (Io), Any Speed
20 ns
500 nA @ 75 V
4pF @ 0V, 1MHz
Military
MIL-PRF-19500/116
Through Hole
DO-204AH, DO-35, Axial
DO-204AH (DO-35)
-65°C ~ 175°C
31,868
In Stock
1 : ₩940.00000
Cut Tape (CT)
5,000 : ₩405.69620
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Active
Avalanche
200 V
2A
1.07 V @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
25 ns
1 µA @ 200 V
-
-
-
Through Hole
SOD-57, Axial
SOD-57
-55°C ~ 175°C
23,887
In Stock
1 : ₩970.00000
Cut Tape (CT)
1,400 : ₩259.73786
Tape & Reel (TR)
-
Tape & Reel (TR)
Cut Tape (CT)
Active
Standard
1000 V
3A
1.2 V @ 3 A
Standard Recovery >500ns, > 200mA (Io)
-
5 µA @ 1000 V
30pF @ 4V, 1MHz
-
-
Through Hole
DO-201AD, Axial
DO-201AD
-50°C ~ 150°C
Showing
of 14,302

Types of Rectifier Diodes


Standard Rectifier Diodes
  • Standard Diodes (Silicon PN Junction)
    Standard diodes are the most basic type of rectifier diode, made from silicon with a PN junction. They’re commonly used in AC-to-DC converters, power rectification, and general circuit protection. These diodes typically have a forward voltage drop around 0.7V and are best suited for low-frequency switching. Their reverse recovery time (how quickly they stop conducting when switched off) is relatively slow, which limits their use in high-speed applications. They also have low reverse leakage current, which makes them reliable for steady-state operations.

  • Schottky Barrier Diodes (SBD)
    Schottky diodes (SBDs) use a metal-semiconductor junction instead of a traditional PN junction, resulting in faster switching speeds and lower forward voltage drops—often between 0.2V and 0.4V. This makes them ideal for DC-DC converters, high-efficiency power supplies, and circuits where minimizing power loss is critical. However, one drawback of SBDs is their higher reverse leakage current, especially at elevated temperatures, which can be a concern in precision or battery-operated devices.

  • Super Barrier Rectifiers (SBR)
    Super Barrier Rectifiers (SBRs) combine the best traits of standard diodes and Schottky diodes. They offer low forward voltage drop like SBDs, but with significantly lower reverse leakage current and improved reverse voltage handling. SBRs are well-suited for switching power converters, adapters, and automotive electronics, where energy efficiency and thermal stability are important. They’re often a better choice than Schottky diodes when the application involves higher ambient temperatures or larger voltage transients.

  • Avalanche Diodes
    Avalanche diodes are designed to operate reliably in reverse breakdown mode, where they safely conduct current once a specific reverse voltage threshold is exceeded. Unlike standard diodes that can be damaged by breakdown, avalanche diodes are built to handle this condition repeatedly and predictably.
  • In fast switching rectification, avalanche diodes are sometimes preferred over standard PN diodes because of their improved reverse recovery behavior, which reduces switching losses and improves overall converter efficiency. Their ability to withstand high reverse voltage transients without degradation makes them particularly suited for snubber circuits, flyback converters, and hard-switched topologies.

  • Silicon Carbide (SiC) Diodes
    SiC diodes are built from silicon carbide, a wide-bandgap material that allows them to handle very high voltages (600V and up) and extreme temperatures (>150°C). They are ideal for industrial converters, electric vehicle chargers, solar inverters, and motor drives, especially in circuits requiring fast switching and zero reverse recovery time. Although more expensive than silicon-based diodes, their durability and efficiency at high voltages and frequencies often make them the best long-term choice in demanding applications.